8 ELECTRICAL CHARACTERISTICS
A-76 EPSON S1C33210 PRODUCT PART
Common characteristics
(Unless otherwise specified: VDD=2.7V to 3.6V, VSS=0V, Ta=-40°C to +85°C)
Item Symbol Min. Max. Unit ∗
Address delay time tAD – 10 ns 1
#CEx delay time (1) tCE1 – 10 ns
#CEx delay time (2) tCE2 – 10 ns
Wait setup time tWTS 17 – ns
Wait hold time tWTH 0 – ns
Read signal delay time (1) tRDD1 10 ns 2
Read data setup time tRDS 15 ns
Read data hold time tRDH 0ns
Write signal delay time (1) tWRD1 10 ns 3
Write data delay time (1) tWDD1 10 ns
Write data delay time (2) tWDD2 010ns
Write data hold time tWDH 0ns
∗ note1) This applies to the #BSH and #BSL timings.
2) This applies to the #GAAS and #GARD timings.
3) This applies to the #GAAS timing.
SRAM read cycle
(Unless otherwise specified: VDD=2.7V to 3.6V, VSS=0V, Ta=-40°C to +85°C)
Item Symbol Min. Max. Unit ∗
Read signal delay time (2) tRDD2 10 ns
Read signal pulse width tRDW tCYC(0.5+WC)-10 ns
Read address access time (1) tACC1 tCYC(1+WC)-25 ns
Chip enable access time (1) tCEAC1 tCYC(1+WC)-25 ns
Read signal access time (1) tRDAC1 tCYC(0.5+WC)-25 ns
SRAM write cycle
(Unless otherwise specified: VDD=2.7V to 3.6V, VSS=0V, Ta=-40°C to +85°C)
Item Symbol Min. Max. Unit ∗
Write signal delay time (2) tWRD2 10 ns
Write signal pulse width tWRW tCYC(1+WC)-10 ns
