LG Electronics KS360 Cell Phone User Manual


 
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3. TECHNICAL BRIEF
LGE Internal Use Only
Copyright © 2008 LG Electronics. Inc. All right reserved.
Only for training and service purposes
3.7 Memory
1Gbit NAND Flash & 512Mbit SDRAM employed on KS360 series with 8 bit bus for NAND and 16bit
bus for SDRAM thru ADD(0) ~ ADD(24). The 1Gbit NAND Flash memory with SDRAM stacked device
family offers multiple high-performance solutions.
0.1u
C138
1V8_VSD2
C134
0.1u
R110
3.3K
R109
3.3K
TP105
TP100
1V8_VSD2
TP104
R105 22
R106 22
TP102
1V8_VSD2
0.1u
C135C131
0.1u
1V8_VSD2
C137
0.1u
0.1u
C133C132
0.1u
0.1u
C136
R111
1
E2
VSSQ1
J2
VSSQ2
L2
VSSQ3
_CAS
F7
C6
_CE
_CS
E9
_RAS
E7
_RE
E5
D6
_WE
F8
_WED
_WP
F5
N7
VCC2
VCCQ
N6
VDD1
B4
VDD2
G9
H2
VDD3
M2
VDD4
D2
VDDQ1
F2
VDDQ2
K2
VDDQ3
C2
VSS1
VSS2
F9
G2
VSS3
VSS4
N4
B5
VSS5
N5
VSS6
VSS7
N8
M6
NC18
NC19
M7
B7
NC2
M8
NC20
NC21
N2
N9
NC22
B9
NC3
E8
NC4
NC5
F3
F6
NC6
G4
NC7
NC8
G5
G6
NC9
E6
R__B
UDQM
H3
VCC1
B6
J6
IO2
L6
IO3
IO4
J7
IO5
L7
J8
IO6
L8
IO7
LDQM
G3
NC1
B2
NC10
H5
H6
NC11
NC12
J3
NC13
K5
K6
NC14
NC15
K7
K8
NC16
NC17
M5
K4
DQ10
DQ11
L3
L4
DQ12
DQ13
M3
M4
DQ14
N3
DQ15
DQ2
C3
D4
DQ3
DQ4
D3
E4
DQ5
DQ6
E3
F4
DQ7
J4
DQ8
DQ9
K3
IO0
J5
IO1
L5
G8
CKE
CLE
C5
H4
CLK
DNU1
A2
P9
DNU10
DNU11
P10
A9
DNU2
DNU3
A10
B1
DNU4
DNU5
B10
N1
DNU6
DNU7
N10
P1
DNU8
DNU9
P2
B3
DQ0
C4
DQ1
A0
C7
C8
A1
A10
D9
A11
H9
A12
G7
A2
C9
A3
B8
A4
M9
A5
L9
A6
K9
A7
J9
A8
H7
H8
A9
ALE
D5
BA0
D7
D8
BA1
K5D1G12ACD-D075
U100
SDRAM_CS
M_RESET
DATA(0:15)
DATA(0:7)
DATA(15)
DATA(4)
DATA(5)
DATA(6)
DATA(7)
DATA(8)
DATA(9)
DATA(10)
DATA(11)
DATA(12)
DATA(13)
DATA(14)
DATA(0)
DATA(1)
DATA(2)
DATA(3)
DATA(3)
DATA(4)
DATA(5)
DATA(6)
DATA(7)
SDCLKI
FLASH1_CS
ADD(0:12)
ADD(12)
ADD(2)
ADD(3)
ADD(4)
ADD(5)
ADD(6)
ADD(7)
ADD(8)
ADD(9)
DATA(0)
DATA(1)
DATA(2)
ADD(0)
ADD(1)
ADD(10)
ADD(11)
_WR
FCDP
ADD(13)
ADD(14)
CKE
_CAS
_RAS
_WR
_BC0
_BC1
SDCLKO
ADD(16)
ADD(17)
_RD
Figure 9. Memory Circuit