Filter
Top Products
- 61 -
3. TECHNICAL BRIEF
3.26 Power Amplifier Module
Table 10 PAM pin description
LGE Internal Use Only
Copyright © 2008 LG Electronics. Inc. All right reserved.
Only for training and service purposes
1R612
1R610
0.5p
C635
0.5p
C634
C636
DNI
R615
1
C642
1
DNIDNI
C641
R613
10KR611
C638
47p
1u
C629
VBAT
1.2nH
L606
R614 1
0.01u 0.01u
C640C639
DCS_PCS_IN
1
DCS_PCS_OUT
12
GND1
14
GND2
11
GND3
8
7
GSM850_900_IN
10
GSM850_900_OUT
2
MODE_SELECT
15
PGND
TX_EN
6
4
VBATT
VRAMP
5
TQM7M5005 U600
BS
313
BY_CAP1
BY_CAP2
9
DNI
C637
10u
C628
27p
C630
R609 1
PA_MODE
TXLB
TXHB
PA_BAND
PA_EN
TX_RAMP
Figure 28. Power Amplifier Circuit Diagram
Pin Mame Description
1 MODE GMSK/EDGE Power control mode. L=GMSK, H=EDGE
2 DCS/PCS_IN RF input(DCS/PCS) DC Blocked
3 BS Band Select
4 REVD1 Reserved
5 VBATT DC Supply
6 VRAMP Analog PA Bias Control(All Bands, EDGE Mode)
Analog Output Power Control(All Bands, GMSK Mode)
7 GSM_IN RF input(EGSM) DC Blocked
9 GSM_OUT RF Output(EGSM) DC Blocked
10,11 GND Ground
12 REVD2 Reserved
13,14,15 GND Ground
16 DCS/PCS_OUT RF Output(DCS/PCS) DC Blocked
Pad GND PAD GRID Ground pad grid is device underside.