Sanyo EP92H Cell Phone User Manual


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● High-frequency silicon transistors for VCO
EC3H09B
Oscillator
ECSP
Type No.
Usage
Package
Size
(mm)
100
1.0
× 0.6
1.4
× 0.8
11.2 4
70
VCEO
(V)
fT
typ.
(GHz)
IC
(mA)
EC3H11B
ECSP
100
1.0
× 0.6 10.5 4 80
SPFP420B
ECSP
100
1.0
× 0.6 25 4.5 35
SPFP540B
ECSP
100
1.0
× 0.6 29 4.5 80
2SC5781
SSFP
100
1.4
× 0.8
11.2 4
70
2SC5783
SSFP
100
10.5 4 80
PC
(mW)
1.5
1.5
1.1
0.9
1.5
1.5
NF
typ.(dB)
6
5
17
8.5
6
5
S21e
2
typ.(dB)
FS301
(TR1 Side)
Oscillator
+ Buffer
ECSP
100
1.2
× 0.8 12.5 4 30
(TR2 Side)
FS303
(TR1 Side)
(TR2 Side)
FS304
(TR1 Side)
(TR2 Side)
100
25 4.5 35
ECSP
100
1.2
× 0.8 12.5 4 30
ECSP
100
11.2 4 70
100
1.2
× 0.8
12.5 4
40
100
11.2 4 70
1.5
1.1
1.5
1.5
1.3
1.5
10.5
2SC5645
SBFP420
2SC5645
2SC5781
2SC5782
2SC5781
17
10.5
8.5
10.5
8.5
EC3H07B
Buffer
ECSP
100
1.0
× 0.6 12.5 4 30
EC3H10B
ECSP
100
1.0
× 0.6 12.5 4 40
2SC5646
SSFP
100
1.4
× 0.8 10 4 30
2SC5782
SSFP
100
1.4
× 0.8 12.5 4 40
1.5
1.3
1.5
1.3
10.5
8.5
9.5
8.5
Notes
SPM3220
SPM3211: Reverse control IC of SPM3212
SPM3215: Single control IC
SPM3226: Reverse control IC of SPM3227
Switch
ECSP
Type No.Usage
Package
Size
(mm)
Notes
26
1.2
× 0.8
2.1
× 2.0
3
**16 **0.5
Isolation
typ.(dB)
Control
Voltage
(V)
Insertion Loss
typ.(dB)
0.4
to
2.5 GHz Use
0.4
to
2.5 GHz Use
0.4
to
2.5 GHz Use
0.4
to
2.5 GHz Use
0.4
to
2.5 GHz Use
0.4
to
2.5 GHz Use
Up to 6 GHz Use
SPM3226
ECSP
22(2.8V)
1.2
× 0.8 2.4
to
5 **18 **0.35
SPM3227
ECSP
22(2.8V)
1.2
× 0.8 2.4
to
5 **18 **0.35
SPM3211
MCPH6
28
2.1
× 2.0 3 **16 **0.55
SPM3212
MCPH6
28
2.1
× 2.0
3
**16
**0.55
SPM3215
MCPH6
26
3
**13 **1.1
SPM3501
MCPH6
20
2.1
× 2.0 3 13 1.0
Pin1dB
typ.(dBm)
** Measured frequency: 2.5 GHz
Measured frequency: 1 to 2.5 GHz
Measured frequency: 5.8 GHz Measured frequency: 5 to 6 GHz
● GaAs MMIC products for Antenna switches, local switches and other switches
SCH1302
SCH6
Type No.
Package
Size
(mm)
410
1.6
× 1.6 20
VDSS
(V)
Pch
SCH2601(Pch)
(Nch)
SCH6
40
30
1.6
× 1.6 30
30
Pch+Nch
SCH2602(Pch)
(Nch)
SCH6
160
7
1.6
× 1.6 12
30
Pch+Nch
3LP03M
MCP
40
2.1
× 2.0 30
Pch
2
I
D
(A)
0.4
0.7
1.5
0.35
250m
0.39
RDS(on)
V
GS=1.5V
Max. (Ω)
0.67
0.22
RDS(on)
V
GS=2.5V
Max. (Ω)
2.8
1.15
0.47
5.2
2.8
*0.165
RDS(on)
V
GS=4.5V
Max. (Ω)
*1.9
*0.9
0.31
*3.7
*1.9
Ciss
typ(pF)
Polarity
3LN03M
MCP
30
2.1
× 2.0 30
Nch
MCH3411
MCPH6
270
2.1
× 2.0 30
Nch
MCH6305
MCPH6
680
2.1
× 2.0 20
Pch
MCH6307
MCPH6
940
2.1
× 2.0 12
Pch
350m
3
4
5
98m
1.15
118m
98m
66m
*0.9
*90m
65m
46m
CPH6311
CPH6
1230
2.8
× 2.9 20
Pch
ECH8603
ECH8
800
2.8
× 2.9 20
Pch Dual
ECH8611
ECH8
1230
2.8
× 2.9 12
Pch Dual
VEC2302
VEC8
510
2.8
× 2.9 30
Pch Dual
5
4
5
3
60m
87m
65m
42m
54m
40m
168m
VEC2303
*VGS=4V, VGS=1.8V
VEC8
940
2.8
× 2.9 12
Pch Dual
4
107m75m49m
MCH5801
MCPH5
0.45
2.1
× 2.0
12
1.5 0.8
200
MCH5815
MCPH5
0.45
2.1
× 2.0
20
1.5 0.8
200
CPH5802
CPH5
0.4
2.8
× 2.9 20 2 0.9
500
CPH5811
CPH5
0.4
2.8
× 2.9 20 3 0.9
500
0.5
0.5
1
1
280m
450m
200m
82m
15
15
15
15
Type No.
Package
Size
(mm)
I
D
(A)
V
DSS
(V)
P
D
(W)
I
O
(A)
RDS(on)
VGS=2.5V
max. (Ω)
V
RRM
(V)
VF
max. (V)
I
R
max. (
µ
A)
SS1003EJ
ECSP
Type No.
Package
Size
(mm)
Notes
0.45
1.6 × 0.8
2.1 × 2.0
30 1 5
IO
(A)
VRRM
(V)
IFSM
(A)
360
SB1003EJ
ECSP
0.55
1.6 × 0.8 30 1 5
15
S0503SH
SCH6
0.47
1.6 × 1.6 30 0.5 5
120
SS1003M
MCPH6
0.45
2.1 × 2.0 30 1 5
15
SB1003M
MCPH6
0.55
2.1 × 2.0 30
1
5
15
SBS004M
MCPH3
0.4
15 1 10
500
SBS808M
MCPH5
Parallel type
0.43
2.1 × 2.0 15 1 10
90
VF
max. (V)
IR
max. (µA)
15C01S
SMCP
Type No.
Package
Size
(mm)
NPN
Porality
300 to 800
1.6
× 1.6
2.1
× 2.0
15 0.6 0.2
IC
(A)
VCEO
(V)
PC
(W)
300
30C02S
SMCP
NPN
300 to 800
1.6
× 1.6 15 0.8 0.2
280
SCH2101
SCH6
PNP
300 to 800
1.6
× 1.6 12 0.8 0.4
240
SCH2201
SCH6
NPN+NPN
300 to 800
1.6
× 1.6 15 0.8 0.4
280
SCH2503(PNP)
(NPN)
SCH6
PNP+NPN
200 to 500
300 to 800
1.6
× 1.6
30
30
0.6
0.6
0.4
0.4
220
190
MCH3106
MCPH3
PNP
200 to 560
12 3 0.8
165
MCH3206
MCPH3
NPN
200 to 560
2.1
× 2.0 15 3 0.8
150
CPH3109
CPH3
PNP
200 to 560
2.8
× 2.9 30 3 0.9
230
CPH3209
CPH3
NPN
200 to 560
2.8
× 2.9 30 3 0.9
180
hFE
Min. to Max.
VCE (sat)
Max. (mV)
As miniaturization and efficiency advance and improve in portable equipment, the needs for further miniaturization and lower
power consumption in discrete devices are increasing even faster.
SANYO responds to these needs by providing an extensive line of products that contribute to reduced mounting areas and
reduced parts counts in application circuits
Light, Fast, Saving, and Friendly
SANYO's Lineup of High-Reliability
Discrete Devices
38 39
Power MOSFETs+ Schottky Barrier Diodes for logic block
Ultralow on-resintance Power MOSFETs for RF and logic block
Low saturation voltage transistors for logic block
Schottky Barrier Diodes for logic block
Microwave Device Series
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