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MB3891
10
(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)
(Continued)
Parameter Symbol Pin No. Conditions
Value
Unit
Min. Typ. Max.
LDO6
(V-BACKUP)
Output voltage V
O 21
−10 µA > V-BACKUP
> −250 µA
2.000 2.100 2.200 V
Line regulation Line 21 3.1 V < VBAT2 < 5.5 V 10 mV
Load regulation Load 21
−10 µA > V-BACKUP
> −250 µA
30 mV
Ripple rejection
∆VBAT2/
∆V-BACKUP
R.R 21 f = 217 Hz 25 dB
GND current at
low load
I
GND 19 V-BACKUP > −10 µA 10 µA
GND current at
max. load
I
GND 19 V-BACKUP = −250 µA 50 µA
Output noise volt.
(RMS)
V
NOVL 21
f = 10 Hz to 1 MHz,
V-BACKUP = 1 µF
500 µV
Reverse current IRC 21
VBAT2 = 0 V,
V-BACKUP = 3.0 V
100 nA
REF-OUT
Output voltage V
O 24 0 µA > REF-OUT > −50 µA 1.200 1.225 1.250 V
Line regulation Line 24 3.1 V < VBAT2 < 5.5 V 10 mV
Load regulation Load 24 0 µA > REF-OUT > −50 µA 6mV
Ripple rejection
∆VBAT2/
∆REF-OUT
R.R 24 f = 217 Hz 50 dB
Output noise volt.
(RMS)
V
NOVL 24
f = 10 Hz to 1 MHz,
REF-OUT = 27 nF
250 µV
VSIMOUT
chargepump
Output voltage
V
O 29
−50 µA > VSIMOUT > −10 mA,
SIMPROG = “H”
4.600 5.000 5.400 V
VO 29
−50 µA > VSIMOUT > −10 mA,
SIMPROG = “L”
2.760 3.000 3.240 V
Line regulation Line 29 3.1 V < VCC-VSIM < 5.5 V 50 mV
Load regulation Load 29 −50 µA > VSIMOUT > −10 mA 100 mV