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MB3891
11
(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)
(Continued)
Parameter Symbol Pin No. Conditions
Value
Unit
Min. Typ. Max.
VSIMOUT
chargepump
Ripple rejection
∆VCC-VSIM/
∆VSIMOUT
R.R 29 f = 217 Hz 30 dB
Output current
I
O 29
3.1 V < VCC-VSIM < 5.5 V,
VSIMOUT = 5 V
10 mA
I
O 29
3.1 V < VCC-VSIM < 5.5 V,
VSIMOUT = 3 V
6 mA
GND current at
no load
IGND 32 VSIMOUT > −50 µA 100 µA
Efficiency at
max. load
η 25, 29
VSIMOUT = −10 mA,
VSIMOUT = 5 V
85 %
Output ripple
voltage
V
RP 29
f = 10 Hz to 1 MHz,
VSIMOUT = 10 µF
100
mV
PP
Shutdown sup-
ply current
ILDO 25 VSIM-ON = “L” 100 nA
GSM/SIM
logic level
translation
µp interface
Input voltage
V
IH
33, 34,
35
0.7 ×
OUT1
OUT1 V
V
IL
33, 34,
35
0
0.3 ×
OUT1
V
Output voltage
V
OH 35 µP-IO (max.) = −20 µA
0.8 ×
OUT1
OUT1 V
VOL 35 µP-IO (max.) = 1 mA 0
0.2 ×
OUT1
V