Chapter 1 Overview
14
Electrical Characteristics
1-5-2 Operating Conditions
Ta=–40 to +85°C V
DD
=2.0 to 5.5V V
SS
=0V
Note: *1. Only for 48-QFH package
∗
2
t
c1
, t
c2
, t
c3
: OSC1 is the CPU clock
t
c4
: XI is the CPU clock
Parameter Symbol Conditions
Rating
Unit
MIN TYP MAX
Supply voltage
1V
DD1
fosc ≤20.0MHz 4.5 5.5
2
Supply voltage
V
DD2
fosc ≤8.39MHz 2.7 5.5
V
3
during operation
V
DD3
fosc ≤2.00MHz 2.0 5.5
4V
DD4
*
1
fx = 32.768kHz 2.0 5.5
5
Voltage to maintain RAM data
V
DD5
STOP mode 1.8 5.5
Operating speed
∗
2
6 tc1 V
DD
=4.5
to
5.5V 0.100
7
Instruction execution time
tc2 V
DD
=2.7
to
5.5V 0.238 µs
8 tc3 V
DD
=2.0
to
5.5V 1.00
9 tc4 *
1
V
DD
=2.0
to
5.5V 40 125
Crystal oscillator 1
Fig. 1-5-1
10 Crystal frequency fxtal 1 V
DD
=4.5
to
5.5V 1.0 20.0 MHz
11
External capacitors
C
11
20
pF
12 C
12
20
13
Internal feedback resistor
RF10 700 kΩ
Crystal oscillator 2
Fig. 1-5-2*
1
14 Crystal frequency fxtal 2 32.768 kHz
15
External capacitors
C
21
20
pF
16 C
22
20
17
Internal feedback resistor
RF20 4.0 MΩ
OSC1
700kΩ
Typ
OSC2
MN101C
fxtal1
C12 C11
XI
4.0MΩ
Typ
XO
MN101C
fxtal2
C22 C21
The instruction cycle is twice the clock cycle.
The feedback resistor is built-in.
Figure 1-5-1 Crystal Oscillator 1
The instruction cycle is four times the clock cycle.
The feedback resistor is built-in.
Figure 1-5-2 Crystal Oscillator 2 *1