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Chapter 18 Flash EEPROM
XVIII - 2
Overview
18-1 Overview
18-1-1 Overview
The MN101CF77G is equivalent to MN101C77C except its Mask ROM is substituted with 128 KB of flash
EEPROM.
Operating voltage of MN101CF77G is as follows.
MN101CF77G Operating voltage: VDD=2.7 V to 3.6 V
Normal operation is guaranteed with up to ten programmings. *1
The MN101CF77G is programmed in one of two modes;
PROM writer mode, which uses a dedicated PROM writer for a microcontroller's stand-alone program-
ming. Onboard programming mode, which the CPU controls programming of a microcontroller on a
target board.
The 128 KB flash EEPROM is divided into two main areas.
Load program area (8 KB : X'04000' to X'05FFF')
This area stores a load program for onboard programming mode. This area is overwritten only in PROM
writer mode. This area is write/erase-protected in the hardware during onboard programming mode.
User program area (120 KB : X'06000' to X'23FFF')
This area stores an user program. It is overwritten in both programming modes.
*1 1 cycle of "erase-write" process is counted as 1 programming in every block.
That is, when several blocks are programmed one-time separately, programming count
is added by just the number of programming cycle. (For instance, when block 1, 2 and 3
are programmed separately, 3 program count is added.)
Therefore, program several blocks together to reduce the programming count.