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Chapter 18 Flash EEPROM
XVIII - 4
Overview
18-1-2 Differences between Mask ROM version and EPROM
version
Table 18-1-1 shows differences between 8-bit microcontroller MN101C77C (Mask ROM version),
MN101CF77G (EPROM version) .
Table 18-1-1 Differences between Mask ROM version and EPROM version
*1 Apply +5 V during Flash EEPROM programming, and apply the same (VDD) potential during
other operations.
MN101C77C MN101CF77G
(Mask ROM Version) (Flash EEPROM Version)
Operating temperature
- 40
o
C to +85
o
C- 40
o
C to +85
o
C
2.5 V to 3.6 V (100ns / 20MHz) 2.7 V to 3.6 V (100ns / 20MHz)
2.1 V to 3.6 V (200ns / 10MHz)
1.8 V to 3.6 V (500ns / 4MHz)
Pin Pin No. 5: NC Pin No. 5: VPP *1
Current consumption
Oscillation characteristics
Noise characteristics
Current consumption of Flash EEPROM versions are larger than
that of the Mask ROM versions, as it features voltage boosting. The
difference is larger in SLOW and HALT mode.
Matching evaluation of each version is necessary when these
versions are rotated for mass production.
Noise evaluation of each version is necessary when these versions
are rotated for mass production.
Operating Voltage